TK55S10N1,LQ
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TK55S10N1,LQ

FETs - Single DPAK+ Surface Mount


Part Number: TK55S10N1,LQ
Make: Toshiba
1,237 In Stock.
Shipping From : New Jersey, USA
Shipping through : DHL, FedEx, UPS
5-7 Days to Ship

Key Features:-

  • • AEC-Q101 qualified
  • • Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ.) (VGS = 10 V)
  • • Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
  • • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
  • • Storage temperature range  −55 to 175 °C
  • • Channel temperature 175 °C 

Specifications : TK55S10N1,LQ

Current - Continuous Drain (Id) @ 25°C 55A (Ta)
Drain to Source Voltage (Vdss) 100V
FET Feature -
FET Type N-Channel
Family FETs - Single
Gate Charge (Qg) @ Vgs 49nC @ 10V
Input Capacitance (Ciss) @ Vds 3280pF @ 10V
Lead Free Status / RoHS Status RoHS Compliant
Manufacturer Part Number TK55S10N1,LQ
Manufacturer Standard Lead Time 12 Weeks
Mounting Type Surface Mount
Operating Temperature 175°C (TJ)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging Reel
Power - Max 157W
Rds On (Max) @ Id, Vgs 6.5mOhm @ 27.5A, 10V
Series U-MOSVIII-H
Standard Package 2,000
Supplier Device Package DPAK+
Vgs(th) (Max) @ Id 4V @ 500µA
Alternate Parts TK55S10N1
iodParts Shield
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Available Quantity: 1,237
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Standard Package Quantity: 2,000
Packaging: Reel
Date Code: 18+

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