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|Categories||Discrete Semiconductor Products|
|Current - Continuous Drain (Id) @ 25°C||58A (Ta)|
|Drain to Source Voltage (Vdss)||60V|
|Drive Voltage (Max Rds On, Min Rds On)||10V|
|Gate Charge (Qg) (Max) @ Vgs||46nC @ 10V|
|Input Capacitance (Ciss) (Max) @ Vds||3400pF @ 30V|
|Lead Free Status / RoHS Status||Lead free / RoHS Compliant|
|Manufacturer||Toshiba Semiconductor and Storage|
|Manufacturer Part Number||TK58E06N1,S1X|
|Moisture Sensitivity Level (MSL)||1 (Unlimited)|
|Mounting Type||Through Hole|
|Operating Temperature||150°C (TJ)|
|Package / Case||TO-220-3|
|Power Dissipation (Max)||110W (Tc)|
|Rds On (Max) @ Id, Vgs||5.4 mOhm @ 29A, 10V|
|Supplier Device Package||TO-220|
|Technology||MOSFET (Metal Oxide)|
|Vgs(th) (Max) @ Id||4V @ 500µA|
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