TK5A65D(STA4,Q,M)
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TK5A65D(STA4,Q,M)

FETs - Single TO-220SIS Through Hole


Price: $0.562 each   
Part Number: TK5A65D(STA4,Q,M)
Make: Toshiba
10,000 In Stock.
Shipping From: Pune, India
Delivery in 5-9 Business Days
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)

Key Features:-

  • • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)
  • • High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.)
  • • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
  • • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 
  • • Storage temperature range  −55 to 150 °C 
  • • Drain-source voltage 650V , Gate-source voltage ±30 
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Buy TK5A65D(STA4,Q,M)

Available Quantity: 10,000
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Minimum: 1,000     Multiple Qty: 1,000
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Available Quantity: 10,000
Packaging: Tube
Date Code: 18+

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1,000 :   $0.623
2,000 :   $0.592
6,000 :   $0.562

Specifications : TK5A65D(STA4,Q,M)

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Part Number TK5A65D(STA4,Q,M)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature 150°C (TJ)
Package / Case TO-220-3 Full Pack
Packaging Tube
Power Dissipation (Max) 40W (Tc)
Rds On (Max) @ Id, Vgs 1.43 Ohm @ 2.5A, 10V
Series ?-MOSVII
Standard Package 50
Supplier Device Package TO-220SIS
Technology MOSFET (Metal Oxide)
Vgs (Max) ?30V
Vgs(th) (Max) @ Id 4V @ 1mA