TK31J60W,S1VQ
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TK31J60W,S1VQ

FETs - Single TO-3P(N) Through Hole


Part Number: TK31J60W,S1VQ
Make: Toshiba
Out Of Stock Re-confirm Stock
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)

Key Features:-

  • • Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.)
  •   by used to Super Junction Structure : DTMOS
  • • Easy to control Gate switching
  • • Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)
  • • Storage temperature range  −55 to 150 °C
  • • Channel temperature 150 °C 

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Standard Package Quantity: 25

Specifications : TK31J60W,S1VQ

Category Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drain to Source Voltage (Vdss) 600V
FET Feature Super Junction
FET Type MOSFET N-Channel, Metal Oxide
Family FETs - Single
Gate Charge (Qg) @ Vgs 86nC @ 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 300V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Part Number TK31J60W,S1VQ
Manufacturer Standard Lead Time 16 Weeks
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature 150°C (TJ)
Package / Case TO-3P-3, SC-65-3
Packaging Tube
Power - Max 230W
Rds On (Max) @ Id, Vgs 88 mOhm @ 15.4A, 10V
Series -
Standard Package 25
Supplier Device Package TO-3P(N)
Vgs(th) (Max) @ Id 3.7V @ 1.5mA