TK58E06N1,S1X
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TK58E06N1,S1X

FETs - Single TO-220 Through Hole


Price: $0.506 each   
Part Number: TK58E06N1,S1X
Make: Toshiba
10,000 In Stock.
Shipping From: Pune, India
Delivery in 5-9 Business Days.
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)

Key Features:-

  • •   Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V)
  • •   Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
  • •   Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
  • •   Drain-source voltage 60v
  • •   Channel temperature  150 
  • •   Storage temperature  -55 to 150
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Available Quantity: 10,000
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Available Quantity: 10,000
Packaging: Tube
Date Code: 18+

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1,000 :   $0.561
2,000 :   $0.533
6,000 :   $0.506

Specifications : TK58E06N1,S1X

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 58A (Ta)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 30V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Part Number TK58E06N1,S1X
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature 150°C (TJ)
Package / Case TO-220-3
Packaging Tube
Power Dissipation (Max) 110W (Tc)
Rds On (Max) @ Id, Vgs 5.4 mOhm @ 29A, 10V
Series U-MOSVIII-H
Standard Package 50
Supplier Device Package TO-220
Technology MOSFET (Metal Oxide)
Vgs (Max) ?20V
Vgs(th) (Max) @ Id 4V @ 500µA