IRLD120
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IRLD120


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Standard Package Quantity: 2,500

Specifications : IRLD120

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Manufacturer Vishay Siliconix
Manufacturer Part Number IRLD120
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case 4-DIP (0.300", 7.62mm)
Packaging Tube
Power Dissipation (Max) 1.3W (Ta)
Rds On (Max) @ Id, Vgs 270 mOhm @ 780mA, 5V
Series -
Standard Package 2,500
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Technology MOSFET (Metal Oxide)
Vgs (Max) ±10V
Vgs(th) (Max) @ Id 2V @ 250µA