SIHF12N60E-E3
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SIHF12N60E-E3


Part Number: SIHF12N60E-E3
Make: Vishay
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Shipping From: Delaware, USA
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Standard Package Quantity: 1,000

Specifications : SIHF12N60E-E3

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 937pF @ 100V
Manufacturer Vishay Siliconix
Manufacturer Part Number SIHF12N60E-E3
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-220-3 Full Pack
Packaging Bulk Pack
Power Dissipation (Max) 33W (Tc)
Rds On (Max) @ Id, Vgs 380 mOhm @ 6A, 10V
Series -
Supplier Device Package TO-220 Full Pack
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 4V @ 250µA