SIR662DP-T1-GE3
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SIR662DP-T1-GE3


Part Number: SIR662DP-T1-GE3
Make: Vishay
Out Of Stock
Shipping From: HongKong, China
RoHS Compliant
100% Warrantied Inventory (ISO 9001:2015 Certified)

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Standard Package Quantity: 3,000

Specifications : SIR662DP-T1-GE3

Categories Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4365pF @ 30V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Vishay Siliconix
Manufacturer Part Number SIR662DP-T1-GE3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case PowerPAK® SO-8
Packaging Reel
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs 2.7 mOhm @ 20A, 10V
Series TrenchFET®
Standard Package 3,000
Supplier Device Package PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2.5V @ 250µA