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SQM120P10-10M1L_GE3


Part Number: SQM120P10-10M1L_GE3
Make: Vishay
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Specifications : SQM120P10-10M1L_GE3

Avalanche Energy Rating (Eas) 304 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 10.1 m?
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Manufacturer Vishay Intertechnologies
Manufacturer Part Number SQM120P10-10M1L_GE3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Description SMALL OUTLINE, R-PSSO-G2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packaging -
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON